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BFL4036
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=10mA, VGS=0V
VDS= 400 V, VGS=0V
VGS=±24V, VDS=0V
500
100
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID= 7 A
3
3.5
7
5
V
S
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID= 7 A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=14A
IS=14A, VGS=0V
See Fig.3
IS=14A, VGS=0V, di/dt=100A/ μ s
0.4
1000
200
44
22
66
117
46
38.4
6.7
22.1
0.95
520
4200
0.52
1.3
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
10V
0V
≥ 50 Ω
RG
G
50 Ω
D
S
L
BFL4036
VDD
VIN
10V
0V
PW=10 μ s
D.C. ≤ 1%
VIN
G
VDD=200V
ID=7A
RL=28.2 Ω
D VOUT
BFL4036
Fig.3 Reverse Recovery Time Test Circuit
D
BFL4036
500 μ H
G
S
VDD=50V
P.G
50 Ω
S
Driver MOSFET
No. A1830-2/6
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